Chapter 2 . High - Frequency InAIAs / InGaAs Metal - Insulator - Doped Semiconductor Field - Effect Transistors ( MIDFETs ) for Telecommunications
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چکیده
InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically less than 5 V) severely restricts their use in high-power applications, such as large-signal microwave amplification and laser driving. It also forces the use of a separate high voltage supply to operate the MetalSemiconductorMetal (MSM) photodetectors in InP photonics receivers.
منابع مشابه
Chapter 7 . High - Frequency InAIAs / InGaAs Metal - Insulator - Doped Semiconductor Field - Effect Transistors ( MIDFETs ) for Telecommunications
MetalInsulatorDoped semiconductor FieldEffect Transistors (MIDFETs) in which the InGaAs channel is heavily doped but the InAIAs insulator is undoped were pioneered by del Alamo and Mizutani at NTT Laboratories.1 These devices have been found to display a performance comparable to InAIAs/InGaAs ModulationDoped FETs (MODFETs) of similar gate length. They additionally offer unique benefits not fou...
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